sep.2000 cm a s(4 - mounting holes) b 3 - m6 nuts e d q k k k f r qn g p h j u c l m h t c measured point e2 g1 e1 g2 e2 c1 c2e1 t dimensions inches millimeters a 4.25 108.0 b 2.44 62.0 c 1.14 +0.04/-0.02 29 +1.0/-0.5 d 3.66 0.01 93.0 0.25 e 1.88 0.01 48.0 0.25 f 0.87 22.0 g 0.16 4.0 h 0.24 6.0 j 0.59 15.0 dimensions inches millimeters k 0.71 18.0 l 0.87 22.0 m 0.33 8.5 n 0.10 2.5 p 0.85 21.5 q 0.98 25.0 r 0.11 2.8 s 0.25 dia. 6.5 dia. t 0.6 15.15 description: mitsubishi igbt modules are de- signed for use in switching applica- tions. each module consists of two igbts in a half-br idge configuration with each transistor having a re- verse-connected super-fast recov- ery free-wheel diode. all compo- nents and interconnects are iso- lated from the heat sinking base- plate, offering simplified system assembly and thermal manage- ment. features: u low drive power u low v ce(sat) u discrete super-fast recovery free-wheel diode u high frequency operation u isolated baseplate for easy heat sinking applications: u ac motor control u motion/servo control u ups u welding power supplies ordering information: example: select the complete module number you desire from the table - i.e. CM200DU-24H is a 1200v (v ces ), 200 ampere dual igbt module. current rating v ces type amperes volts (x 50) cm 200 24 outline drawing and circuit diagram mitsubishi igbt modules CM200DU-24H high power switching use insulated type
sep.2000 absolute maximum ratings, t j = 25 c unless otherwise specified symbol ratings units junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c collector-emitter voltage (g-e short) v ces 1200 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 25 c) i c 200 amperes peak collector current (t j 150 c) i cm 400* amperes emitter current** (t c = 25 c) i e 200 amperes peak emitter current** i em 400* amperes maximum collector dissipation (t c = 25 c) p c 1130 w atts mounting torque, m6 main terminal C 3.5~4.5 n m mounting torque, m6 mounting C 3.5~4.5 n m weight C 400 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 vrms * pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). static electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v C C 1 ma gate leakage voltage i ges v ge = v ges , v ce = 0v C C 0.5 m a gate-emitter threshold voltage v ge(th) i c = 20ma, v ce = 10v 4.5 6 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 200a, v ge = 15v, t j = 25 c C 2.9 3.7 volts i c = 200a, v ge = 15v, t j = 125 c C 2.85 C volts total gate charge q g v cc = 600v, i c = 200a, v ge = 15v C 750 C nc emitter-collector voltage* v ec i e = 200a, v ge = 0v C C 3.2 volts * pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. dynamic electrical characteristics, tt j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units input capacitance c ies CC30nf output capacitance c oes v ce = 10v, v ge = 0v C C 10.5 nf reverse transfer capacitance c res CC6nf resistive turn-on delay time t d(on) v cc = 600v, i c = 200a, C C 200 ns load rise time t r v ge1 = v ge2 = 15v, C C 300 ns switch turn-off delay time t d(off) r g = 1.6 w , resistive C C 300 ns times fall time t f load switching operation C C 350 ns diode reverse recovery time t rr i e = 200a, di e /dt = -400a/ m sC C300ns diode reverse recovery charge q rr i e = 200a, di e /dt = -400a/ m s C 1.1 C m c thermal and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) q per igbt 1/2 module C C 0.11 c/w thermal resistance, junction to case r th(j-c) d per fwdi 1/2 module C C 0.18 c/w contact thermal resistance r th(c-f) per module, thermal grease applied C 0.020 C c/w mitsubishi igbt modules CM200DU-24H high power switching use insulated type
sep.2000 mitsubishi igbt modules CM200DU-24H high power switching use insulated type gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge, v ge 20 0 250 500 16 12 8 4 0 750 1000 v cc = 600v v cc = 400v i c = 200a emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 3 10 2 10 1 t rr i rr di/dt = -400a/ m sec t j = 25 c 10 2 10 1 10 0 reverse recovery current, i rr , (amperes) collector current, i c , (amperes) 10 1 10 2 10 3 10 3 10 2 10 1 t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 1.6 w t j = 125 c t f switching time, (ns) half-bridge switching characteristics (typical) collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 -1 10 0 10 2 10 2 10 1 10 0 10 -1 v ge = 0v 10 1 c ies c oes c res 1.0 1.5 2.0 2.5 3.5 3.0 4.0 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 2 10 3 emitter current, i e , (amperes) t j = 25 c gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 048121620 8 6 4 2 0 t j = 25 c i c = 80a i c = 400a i c = 200a collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 5 0 80 160 240 320 4 3 2 1 0 400 v ge = 15v t j = 25 c t j = 125 c gate-emitter voltage, v ge , (volts) collector current, i c , (amperes) transfer characteristics (typical) 048121620 320 240 160 80 0 400 v ce = 10v t j = 25 c t j = 125 c collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0246810 240 80 0 v ge = 20v 15 12 11 8 t j = 25 o c 160 320 400 10 9
sep.2000 mitsubishi igbt modules CM200DU-24H high power switching use insulated type time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics ( igbt) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.11 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3 time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (fwdi) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 single pulse t c = 25 c per unit base = r th(j-c) = 0.18 c/w z th = r th ?(normalized value)
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